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NTE261 305D5WFR 101M35 OPI7010 3225X 120000 UT54ACS LINEAR
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  bar 14-1 ... bar 16-1 oct-04-1999 1 silicon pin diodes ? rf switch, rf attenuator for frequencies above 10 mhz ? low distortion faktor ? long-term stability of electrical characteristics 1 2 3 vps05161 bar 15-1 bar 14-1 bar 16-1 eha07004 1 3 2 eha07006 1 3 2 eha07005 1 3 2 type marking pin configuration package bar 14-1 bar 15-1 bar 16-1 l7s l8s l9s 1 = a1 1 = a1 1 = c1 2 = c2 2 = a2 2 = c2 3=c1/a2 3 = c1/2 3 = a1/2 sot-23 sot-23 sot-23 maximum ratings parameter value unit symbol diode reverse voltage v 100 v r ma forward current i f 140 total power dissipation , t s 65c mw p tot 250 junction temperature c 150 t j t op -55 ... 150 operating temperature range storage temperature t st g -55 ... 150 thermal resistance junction - ambient 1) r thja 500 k/w junction - soldering point r thjs 340 1) package mounted on alumina 15mm x 16.7mm x 0.7mm
bar 14-1 ... bar 16-1 oct-04-1999 2 electrical characteristics at t a = 25c, unless otherwise specified. parameter values unit symbol min. max. typ. dc characteristics i r - - na 100 reverse current v r = 50 v i r reverse current v r = 100 v - - 1 a forward voltage i f = 100 ma v f - 1.05 - v ac characteristics pf c t diode capacitance v r = 0 v, f = 100 mhz v r = 50 v, f = 1 mhz - 0.5 0.2 0.25 - - ? r f forward resistance i f = 0.01 ma, f = 100 mhz i f = 0.1 ma, f = 100 mhz i f = 1 ma, f = 100 mhz i f = 10 ma, f = 100 mhz - - - - - - - - 2800 380 45 7 s zero bias conductance v r = 0 v, f = 100 mhz 50 - g p - charge carrier life time i f = 10 ma, i r = 6 ma, i r = 3 ma rr s 0.7 1 -
bar 14-1 ... bar 16-1 oct-04-1999 3 forward current i f = f ( v f ) t a = 25c 0.0 10 ehd07065 bar 14-1...16-1 f f v -2 -1 10 0 10 1 10 10 2 ma -40 ?c t a = 25 150 85 0.5 1.0 v 1.5 ?c ?c ?c forward current i f = f ( t a *; t s) * package mounted on alumina 0? c 0 ehd07068 bar 14-1...16-1 f a t ; t s 50 100 150 20 40 60 80 100 120 140 160 ma 200 t a s t forward resistance r f = f ( i f ) f = 100mhz 10 ehd07066 bar 14-1...16-1 r f f -2 2 10 ma 0 10 ? 10 4 10 1 10 2 10 3 -1 10 0 10 1 10 diode capacitance c t = f ( v r ) f = parameter 0 0.0 ehd07067 bar 14-1...16-1 c t r v 0.5 pf 1.0 f = 1 = 100 f mhz mhz 10 20 30 40 v 50


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